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| Agilent AMMC-6420 6 - 18 GHz Power Amplifier Data Sheet Features * Wide frequency range: 6 - 18 GHz * High gain: 20 dB * Power: @17 GHz, P-2dB=30.5 dBm * Highly linear: OIP3=38dBm Description AMMC-6420 MMIC is a broadband 1W power amplifier designed for use in frequency bands between 6 to 18GHz. It is a cost-effective alternative in commercial communications systems to a discrete FET hybrid. The MMIC has a partial input and output match to 50 but can be easily externally matched by single element for narrow band frequency coverage The MMIC is unconditionally stable over all frequencies and bias * Integrated RF power detector * 5.5 Volt, -0.6 Volt, 800mA operation Chip Size: 2000 x 2000 mm (78.5 x 78.5 mils) Chip Size Tolerance: 10mm (0.4 mils) Chip Thickness: 100 10mm (4 0.4 mils) Pad Dimensions: 100 x 100 mm (4 0.4 mils) Applications * Microwave Radio systems * Satellite VSAT and DBS systems * LMDS & Pt-Pt mmW Long Haul * 802.16 & 802.20 WiMax BWA * WLL and MMDS loops * Commercial grade military * Can be driven by AMMC-5618 (620 GHz) MMIC increasingluding overall gain. conditions. Gate voltage is set using the Vg pin to optimize for linear or saturated power amplification. A temperature compensated RF output power detector circuit allows differential output power detection of 0.3V/W at 18 GHz. AMMC-6420 Absolute Maximum Ratings[1] Symbol Vd Vg Id Pin Tch Tstg Tmax Parameters/Conditions Positive Drain Voltage Gate Supply Voltage Drain Current CW Input Power Operating Channel Temp. Storage Case Temp. Units V V mA dBm C C Min. -3 Max. 7 0.5 1500 23 +150 -65 +150 +300 Maximum Assembly Temp C (60 sec max) Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices AMMC-6420 DC Specifications/Physical Properties [1] Symbol Id Parameters and Test Conditions Drain Supply Current (under any RF power drive and temperature) (Vd=5.5 V, Vg set for Id Typical) Gate Supply Operating Voltage (Id(Q) = 800 (mA)) Thermal Resistance[2] (Backside temperature, Tb = 25C) Units mA Min. Typ. 800 Max. 1000 Vg ch-b V C/W -0.8 -0.6 8.9 -0.4 Notes: 1. Ambient operational temperature TA=25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (ch-b) = 10.7C/W at Tchannel (Tc) = 120C as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. AMMC-6420 RF Specifications [3, 4, 5] (TA= 25C, Vd=5.5, Id(Q)=800 mA, Zo=50 ) Symbol Gain P-1dB P-3dB OIP3 Parameters and Test Conditions Small-signal Gain[4] Output Power at 1dB Gain Compression Output Power at 3dB Gain Compression Third Order Intercept Point; f=100MHz; Pin=-20dBm Input Return Loss[4] Output Return Loss[4] Units dB dBm dBm dBm Minimum 16.5 27 Typical 20 29 30 38 Maximum Sigma 0.45 0.27 0.23 0.75 RLin RLout dB dB dB -3 -6 -45 0.23 0.25 1.10 Isolation Min. Reverse Isolation Notes: 3. Small/Large -signal data measured in wafer form TA = 25C. 4. 100% on-wafer RF test is done at frequency = 8, 12, and 18 GHz. 5. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or power matching. LSL LSL LSL 17 18 19 20 27 28 29 30 31 28 29 Gain at 12 GHz P-1dB at 8 GHz P-1dB at 18 GHz Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several production lots 2 AMMC-6420 Typical Performances (TA = 25C, Vd =5.5 V, ID = 800 mA, Zin = Zout = 50 ) NOTE: These measurements are in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or power matching. 40 35 30 25 S21[dB] 20 15 10 5 0 2 4 6 8 10 12 14 16 Frequency [GHz] 18 20 S21[dB] S12[dB] 0 0 40 P-2 PAE 35 -20 Return Loss [dB] -5 P-2 [dBm], PAE [%] S11[dB] S22[dB] 30 -40 S12 [dB] -10 25 20 -60 -15 15 -80 22 -20 2 4 6 8 10 12 14 16 Frequency [GHz] 18 20 22 10 4 6 8 10 12 14 Frequency [GHz] 16 18 20 Figure 1. Typical Gain and Reverse Isolation Figure 2. Typical Return Loss (Input and Output) Figure 3. Typical Output Power (@P-2) and PAE 10 9 8 7 50 40 35 Pout(dBm) PAE[%] Id(total) 950 Po[dBm], and, PAE[%] 45 30 25 20 15 10 5 850 Noise Figure [dB] IP3 [dBm] 6 5 4 3 2 1 0 4 6 8 10 12 14 Frequency [GHz] 16 18 20 40 750 35 650 30 4 6 8 10 12 14 Frequency [GHz] 16 18 20 0 -10 -5 0 5 10 Pin [dBm] 15 550 20 Figure 4. Typical Noise Figure Figure 5. Typical Output 3rd Order Intercept Pt. Figure 6. Typical Output Power, PAE, and Total Drain Current versus Input Power at 18GHz 0 0 30 S21_20 S21_-40 S21_85 -5 -5 25 S11[dB] S22[dB] -15 -15 S21[dB] -10 -10 20 15 -20 S11_20 S11_-40 S11_85 -20 S22_20 S22_-40 S22_85 10 -25 -25 0 5 10 15 Frequency [GHz] 20 25 0 5 10 15 Frequency[GHz] 20 25 5 0 5 10 15 Frequency[GHz] 20 25 Figure 7. Typical S11 over temperature Figure 8. Typical S22 over temperature Figure 9. Typical Gain over temperature 3 Ids [mA] 34 32 30 P-2 [dBm] 28 26 24 P-2_85deg 22 20 P-2_20deg P-2_-40deg 5 10 15 Frequency [GHz] 20 Figure 10. Typical P-2 over temperature Typical Scattering Parameters [1], (TA = 25C, Vd =5.5 V, ID = 800 mA, Zin = Zout = 50 ) S11 Freq GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 dB -0.85 -1.28 -2.06 -2.91 -3.20 -2.91 -2.73 -2.46 -2.22 -2.28 -2.76 -3.89 -6.19 -8.87 -5.93 -3.97 -3.82 -5.51 -12.43 -8.88 -2.37 -0.99 -0.65 -0.54 -0.46 -0.40 Mag 0.91 0.86 0.79 0.72 0.69 0.72 0.73 0.75 0.77 0.77 0.73 0.64 0.49 0.36 0.51 0.63 0.64 0.53 0.24 0.36 0.76 0.89 0.93 0.94 0.95 0.95 Phase -69.53 -114.70 -141.33 -156.19 -162.66 -170.79 -178.53 172.56 162.29 148.18 131.48 107.67 66.21 -17.97 -100.42 -145.89 -177.46 151.43 103.81 -63.36 -118.45 -145.51 -161.21 -171.73 -179.38 174.06 S21 dB -16.32 1.47 -25.02 -0.83 16.56 23.65 23.09 20.74 18.44 17.16 17.00 18.09 19.92 21.27 20.85 19.42 18.11 17.25 13.56 3.19 -14.91 -37.99 -35.39 -44.58 -46.20 -56.48 Mag 0.15 1.18 0.06 0.91 6.73 15.22 14.27 10.89 8.36 7.21 7.08 8.02 9.91 11.57 11.03 9.35 8.05 7.29 4.77 1.44 0.18 0.01 0.02 0.01 0.00 0.00 Phase 175.58 49.05 -63.29 159.65 57.13 -63.61 -160.60 128.10 74.59 31.07 -9.66 -52.96 -104.92 -169.21 119.60 52.62 -15.59 -95.95 158.78 47.46 -35.35 20.47 1.97 -16.33 -33.78 -41.36 S12 dB -51.70 -46.75 -57.72 -57.72 -57.72 -54.90 -57.72 -57.08 -57.08 -54.90 -53.56 -53.15 -50.17 -47.54 -48.40 -46.56 -47.96 -50.46 -52.04 -46.20 -48.87 -54.90 -54.43 -56.48 -66.02 -60.00 Mag 2.60E-03 4.60E-03 1.30E-03 1.30E-03 1.30E-03 1.80E-03 1.30E-03 1.40E-03 1.40E-03 1.80E-03 2.10E-03 2.20E-03 3.10E-03 4.20E-03 3.80E-03 4.70E-03 4.00E-03 3.00E-03 2.50E-03 4.90E-03 3.60E-03 1.80E-03 1.90E-03 1.50E-03 5.00E-04 1.00E-03 Phase -95.53 -125.88 -130.77 64.56 110.37 56.43 -35.93 -78.75 -109.63 -136.34 153.71 151.00 104.36 48.68 -7.09 -83.32 -127.39 150.09 140.32 102.64 59.47 2.36 -23.94 38.32 46.67 158.26 S22 dB -0.74 -2.93 -0.59 -1.18 -4.56 -12.67 -6.90 -7.10 -5.99 -5.33 -5.56 -6.70 -9.09 -11.27 -9.02 -7.32 -7.66 -9.92 -6.05 -3.22 -2.57 -2.14 -1.79 -1.49 -1.22 -1.08 Mag 0.92 0.71 0.93 0.87 0.59 0.23 0.45 0.44 0.50 0.54 0.53 0.46 0.35 0.27 0.35 0.43 0.41 0.32 0.50 0.69 0.74 0.78 0.81 0.84 0.87 0.88 Phase -61.37 -110.65 -134.98 -171.79 151.19 -160.02 -173.75 -179.00 175.99 163.53 149.41 135.78 126.82 138.43 143.80 126.32 102.27 88.21 80.79 31.22 -14.04 -48.95 -76.03 -97.03 -113.22 -126.30 Note: 1. Data obtained from on-wafer measurements. 4 Biasing and Operation The recommended quiescent DC bias condition for optimum efficiency, performance, and reliability is Vd=5.5 volts with Vg set for Id=800 mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 5.5V. A single DC gate supply connected to Vg will bias all gain stages. Muting can be accomplished by setting Vg to the pinch-off voltage Vp (1.0V). An optional output power detector network is also provided. The differential voltage between the Det-Ref and Det-Out pads can be correlated with the RF power emerging from the RF output port. The detected voltage is given by : V = (Vref - Vdet ) - Vofs fit used to calculate at any temperature. This method gives an error close to the method #1. The RF ports are AC coupled at the RF input to the first stage and the RF output of the final stage. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. Assembly Techniques The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [1] For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plate metal shim (same length and width as the MMIC) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. The amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plain should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 12. Note that all the RF input and output ports are in a GroundSignal-Ground configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is normally sufficient for signal connections, however double bonding with 0.7 mil gold wire or use of gold mesh [2] is recommended for best performance, especially near the high end of the frequency band. Thermosonic wedge bonding is preferred method for wire attachment to the bond pads. Gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams and a ultrasonic power of roughly 55 dB for a duration of 76 +/- 8 mS. The guided wedge at an untrasonic power level of 64 dB can be used for 0.7 mil wire. The recommended wire bond stage temperature is 150 +/- 2C. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. The chip is 100um thick and should be handled with care. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up the die with a vacuum on die center). This MMIC is also static sensitive and ESD precautions should be taken. Notes: [1] Ablebond 84-1 LM1 silver epoxy is recommended. [2] Buckbee-Mears Corporation, St. Paul, MN, 800-262-3824 where V ref is the voltage at the DET _ R port, Vdet is a voltage at the DET _ O port, and Vofs is the zero-input-power offset voltage. There are three methods to calculate : 1. Vofs can be measured before each detector measurement (by removing or switching off the power source and measuring ). This method gives an error due to temperature drift of less than 0.01dB/50C. 2. Vofs can be measured at a single reference temperature. The drift error will be less than 0.25dB. 3. Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear 5 Vg Vd 1 Vd 2 DQ DET _O RF in RF out DQ Vg Vd 1 Vd 2 DET _R Figure 11. AMMC-6420 Schematic RFin RFout Figure 12. AMMC-6420 Bonding pad locations Vd Vg 68 pF 0.5nH Vg Vd 1 Vd 2 DET _ O RFOutput RFInput RFI AMMC-6420 RFO DET _ R Vg Vd 1 Vd 2 0.5nH Vg 68 pF Vd Figure 13. AMMC-6420 Assembly diagram Notes: 1. 1mF capacitors on DC biasing lines not shown required. 2. Vg connections recommended on both sides for devices operating at or above 1 condition. 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 1 Det_R - Det_O [V] 0.1 5 10 15 20 25 Pout[dBm] 30 35 0.01 Figure 14. AMMC-6420 Typical Detector Voltage and Output Power, Freq=12GHz Det_R - Det_O [V] www.agilent.com/ semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. October 4, 2004 5989-1704EN |
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